Electronic and Instrumentation > Bipolar transistors, IGBT

2n5551 transistor

2n5551 transistor

Features:
  • structure: npn
  • The maximum collector-base voltage for a given reverse current and open circuit e .: 180 V
  • The maximum collector-emitter voltage at a given current and open circuit b .: 160 100
  • The maximum allowable current to 0.6 A .:
  • Static current transfer ratio e (min.): 50
  • Cutoff frequency of current transfer ratio: 100 MHz
  • Maximum Power Dissipation: 0.35 W
  • Datishit
Price:
3.1 грн
Code: 326
шт.
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