Electronic and Instrumentation

IRF840 transistor

IRF840 transistor

Features:

  • Configuration and polarity: N
  • The maximum drain-source voltage:5200 V
  • The drain current rating at 25 ° C: 8 A
  • The resistance of the open channel 850 milliohms
  • The maximum gate voltage: 20 V
  • Power Dissipation: 125 W

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