FQP30N06 transistor

FQP30N06 transistor

Characteristics:
  • The structure: n-channel
  • The maximum drain-source voltage: 60 V
  • The maximum drain-source current at 25 ° C: 32 A
  • The maximum gate-source voltage: ± 20 V
  • Channel Resistance: 3.5 milliohms
  • The maximum power dissipation of 79 watts
  • The threshold gate voltage: 2.5 V
  • Housing: to220ab
  • Datasheet
Price:
17.6 грн
Code: 719
шт.

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