FQP30N06 transistor
Characteristics:
- The structure: n-channel
- The maximum drain-source voltage: 60 V
- The maximum drain-source current at 25 ° C: 32 A
- The maximum gate-source voltage: ± 20 V
- Channel Resistance: 3.5 milliohms
- The maximum power dissipation of 79 watts
- The threshold gate voltage: 2.5 V
- Housing: to220ab
- Datasheet Ul>
Price:
28.6 грн