IRF540N transistor

IRF540N transistor

Characteristics:
  • The structure: n-channel
  • The maximum drain-source voltage: 100 V
  • The maximum drain-source current at 25 ° C: 33 A
  • The maximum gate-source voltage: ± 20 V
  • Channel Resistance: 44 milliohms  
  • Maximum Power Dissipation: 120 W
  • Housing: to220ab
  • The threshold voltage of the gate: 2 ... 4
  • Datasheet
Price:
13.5 грн
Code: 742
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