irlz44 MOSFET transistor

irlz44 MOSFET transistor

Features:

  • Channel Type: N
  • The maximum drain-source voltage: 55 V
  • drain current at nominal 25 ° C, without being constrained case: A 41
  • The resistance of the open channel 22 ... 35 milliohms
  • Rated voltage range gate: 4.5 ... 10
  • The maximum gate voltage: 16 V
  • The charge of the gate: 32 nC
  • Power dissipation: 83 W
  • Operating temperature range: -55..175S
  • Datasheet
К-во Price
От1шт22.5грн
От15шт21.4грн
Code: 267
шт.


IRF3710 MOSFET transistor

IRF3710 MOSFET transistor

Features:

  • Channel Type: N
  • The maximum drain-source voltage: 100 B
  • The drain current rating at 25 ° C: 59 A
  • Open the channel resistance: 18 milliohms
  • The nominal gate voltage: 10 V
  • The maximum gate voltage: 20 V
  • The charge of the gate: 82 nC
  • Power Dissipation: 160 W
  • Datasheet
К-во Price
От1шт37.7грн
От9шт35.8грн
Code: 268
шт.


IRFB4321 transistor

IRFB4321 transistor

Features:

  • Type: MOSFET power transistor
  • Channel Type: N
  • The maximum drain-source voltage: 150 V
  • The drain current rating at 25 ° C: 83 A
  • Open the channel resistance: 15 milliohms
  • The nominal gate voltage: 10 V
  • The maximum gate voltage: 30 V
  • The charge of the gate: 71 nC
  • Power Dissipation: 330 W
  • Datasheet
К-во Price
От1шт80грн
От5шт76грн
Code: 270
шт.


irfb4115 transistor

irfb4115 transistor

Features:

  • Configuration and polarity: N
  • The maximum drain-source voltage: 150 V
  • The drain current rating at 25 ° C: 104 A
  • The resistance of the open channel 11 milliohms
  • The nominal gate voltage: 10 V
  • The maximum gate voltage: 20 V
  • The charge of the gate: 77 nC
  • Power Dissipation: 380 W
  • Datasheet
Price:
58 грн
Code: 271
шт.


IRG4PC30F    transistor

IRG4PC30F transistor

Features:

  • voltage to the maximum-E: 600
  • maximum collector current: 17 A
  • The saturation voltage E K: 1.59 in
  • The rise time of 26 ns
  • Fall Time: 160 ns
  • Datasheet
Price:
85 грн
Code: 272
шт.


irf9640 transistor

irf9640 transistor

Features:

  • Transistor Polarity: P  
  • The maximum voltage Vds: 200V  
  • On Resistance: 0.5 ohms
  • Power Dissipation: 125 W  
  • The number of contacts: 3  
  • Lead Spacing: 2.54 mm  
  • Power consumption PD: 125 W
  • Pulse current Idm: 44A
  • Datasheet
Price:
24.7 грн
Code: 273
шт.


IRFP4668 MOSFET transistor

IRFP4668 MOSFET transistor

Features:

  • Channel Type: N
  • The maximum drain-source voltage: 200 B
  • The drain current rating at 25 ° C: 130 A
  • Open the channel resistance: 9.7 mOhms
  • The maximum gate voltage: 30 V
  • Power Dissipation: 520 W
  • Datasheet
К-во Price
От1шт140грн
От3шт133грн
Code: 355
шт.


IRF740 transistor

IRF740 transistor

Features:

  • Configuration and polarity: N
  • The maximum drain-source voltage: 400 V
  • The drain current rating at 25 ° C: 10 A
  • The resistance of the open channel 550 milliohms
  • The maximum gate voltage: 30 V
  • Power Dissipation: 125 W
К-во Price
От1шт29.2грн
От12шт27.8грн
Code: 366
шт.


IRF630 transistor

IRF630 transistor

Features:

  • Configuration and polarity: N
  • The maximum drain-source voltage: 200 V
  • The drain current rating at 25 ° C: 9.3 A
  • The resistance of the open channel 400 milliohms
  • The maximum gate voltage: 20 V
  • Power Dissipation: 74 W
К-во Price
От1шт28.1грн
От12шт26.7грн
Code: 367
шт.


IRF840 transistor

IRF840 transistor

Features:

  • Configuration and polarity: N
  • The maximum drain-source voltage:5200 V
  • The drain current rating at 25 ° C: 8 A
  • The resistance of the open channel 850 milliohms
  • The maximum gate voltage: 20 V
  • Power Dissipation: 125 W
Price:
23.3 грн
Code: 368
шт.


2N7000 transistor

2N7000 transistor

Features:

  • Channel Type: N
  • The maximum drain-source voltage: 60 B
  • The drain current rating at 25 ° C: 0.2 A
  • Open the channel resistance: 5000 mOhms
  • The maximum gate voltage: 20 V
  • Power Dissipation: 0.4 W
  • Datasheet
Price:
2.2 грн
Code: 382
шт.


IRL2505 transistor

IRL2505 transistor

Features:

  • Channel Type: N
  • The maximum drain-source voltage: 55 B
  • The drain current rating at 25 ° C: 104 A
  • Open the channel resistance: 8 mOhms
  • The maximum gate voltage: 2 V
  • Power Dissipation: 200 W
  • Datasheet
К-во Price
От1шт45грн
От8шт43грн
От35шт38.4грн
Code: 438
шт.


IRF4905 transistor

IRF4905 transistor

Features:

  • Channel Type: P
  • The maximum drain-source voltage: 55 B
  • The drain current rating at 25 ° C: 74 A
  • Open the channel resistance: 20 mOhms
  • The maximum gate voltage: 20 V
  • Power Dissipation: 200 W
  • Datasheet
К-во Price
От1шт30.9грн
От11шт29.4грн
От50шт26.6грн
От91шт24.7грн
Code: 449
шт.


IRFР460 transistor

IRFР460 transistor

Features:

  • Type: MOSFET power transistor
  • Channel Type: N
  • The maximum drain-source voltage: 500 V
  • The drain current rating at 25 ° C: 20 A
  • Open the channel resistance: 270 milliohms
  • The maximum gate voltage: 4 V
  • Power Dissipation: 280 W
  • Datasheet
Price:
64 грн
Code: 470
шт.


IRFZ44N transistor

IRFZ44N transistor

Features:

  • Type: MOSFET power transistor
  • Channel Type: N
  • The maximum drain-source voltage: 55 V
  • The drain current rating at 25 ° C: 49 A
  • Open the channel resistance: 17.5 milliohms
  • The maximum gate voltage: 2..4 V
  • Power Dissipation: 94 W
  • Datasheet
К-во Price
От1шт16грн
От22шт15.2грн
Code: 494
шт.


IRF3205 transistor

IRF3205 transistor

Features:

  • Channel Type: N
  • The maximum drain-source voltage: 55 B
  • The drain current rating at 25 ° C: 110 A
  • Open the channel resistance: 8 mOhms
  • The maximum gate voltage: 20 V
  • Power Dissipation: 200 W
  • Datasheet
К-во Price
От1шт16.9грн
От20шт16грн
Code: 583
шт.


FGH40N60SFD transistor

FGH40N60SFD transistor

Characteristics:
  • The structure: n-channel
  • The maximum voltage to the e-: 600
  • The maximum current to the e-: 80 A
  • The saturation voltage at rated current: 2.5
  • Control voltage: 5V
  • Power max .: 290 W
  • Operating temperature range: -55 ... + 150 ° C
  • Housing: to-247
  • Datasheet
Price:
65 грн
Code: 663
шт.


IRLB3034PBF transistor

IRLB3034PBF transistor

Characteristics:
  • Channel Type: N
  • The maximum drain-source voltage: 40 B
  • The maximum drain-source current: 195 A
  • The maximum gate-source voltage: ± 20 V
  • Shutter Charge: 108 nC
  • Open Channel Resistance: 1.7 milliohms  
  • Power Dissipation: 375 W
  • The body to220ab
  • Datasheet
К-во Price
От1шт39.3грн
От9шт37.4грн
Code: 664
шт.


FQP30N06 transistor

FQP30N06 transistor

Characteristics:
  • The structure: n-channel
  • The maximum drain-source voltage: 60 V
  • The maximum drain-source current at 25 ° C: 32 A
  • The maximum gate-source voltage: ± 20 V
  • Channel Resistance: 3.5 milliohms
  • The maximum power dissipation of 79 watts
  • The threshold gate voltage: 2.5 V
  • Housing: to220ab
  • Datasheet
Price:
18.3 грн
Code: 719
шт.


IRF540N transistor

IRF540N transistor

Characteristics:
  • The structure: n-channel
  • The maximum drain-source voltage: 100 V
  • The maximum drain-source current at 25 ° C: 33 A
  • The maximum gate-source voltage: ± 20 V
  • Channel Resistance: 44 milliohms  
  • Maximum Power Dissipation: 120 W
  • Housing: to220ab
  • The threshold voltage of the gate: 2 ... 4
  • Datasheet
Price:
14.1 грн
Code: 742
шт.

Transistor - electronic semiconductor device for amplifying, generating and converting electrical signals. Tranzistor allows you to adjust the strength of the electric current. Two main functions of the device in an electric circuit - a switch and an amplifier.

Transistor strengthens weak energy supplied to it by the energy of the signal power source.

In transistor three conclusions: the collector, base and emitter. Driving the transistor

Between the collector and emitter current, it is called the collector current, between the base and emitter - weak control current base. The magnitude of the collector current depends on the magnitude of the base current. Moreover, the collector current of the base current is always greater than a certain number of times. This value is called the current gain. Different types of transistors , this value varies from a few to hundreds of times.

Transistors is divided into two major groups:  

  • bipolar transistors (BT) (international term - BJT, Bipolar Junction Transistor);
  • unipolar transistors, yet they are called field (international term - FET, Field Effect Transistor).

FET works as follows: a weak signal on the gate control a powerful flow through the channel. Unlike bipolar transistors, there is no control of current and voltage.

In FET has a semiconductor channel, which serves as a one capacitor plate and the second plate - a metal electrode disposed through a thin layer of silicon oxide, which is an insulator. When the gate voltage is applied, then the capacitor is charged, and the electric field pulls the gate to the channel charges, resulting in the channel the mobile charges arise capable of forming an electrical resistance and current drain - source sharply drops.

The advantage of FET , compared with bipolar obvious - to be supplied to the gate voltage, but since there is an insulator, the current is zero, and hence the required power to control this transistor will be miserable.

Field (MOS) transistors are P- and N-channel. The principle they have one and the same, the only difference in the polarity of the charge carriers in the channel. Accordingly, in a different direction, and control voltage switching in the circuit.

Field-effect transistors are mostly used in digital technology.

The company has GreenChip offers you preobresti various FETs .