IRLB3034PBF transistor
Characteristics:
- Channel Type: N
- The maximum drain-source voltage: 40 B
- The maximum drain-source current: 195 A
- The maximum gate-source voltage: ± 20 V
- Shutter Charge: 108 nC
- Open Channel Resistance: 1.7 milliohms
- Power Dissipation: 375 W
- The body to220ab
- Datasheet
Price:
62 грн
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IRLB3034PBF transistor is designed for DC-DC converters and drive control systems with high operating current. Low open channel resistance level helps to improve the thermal conductivity of the system - one of the most critical parameters with high operating current converters. On the other hand, a low gate-source voltage of the transistor can control the microcontroller or when the battery is low. Low gate-source voltage also increases the efficiency when operating at low loads due to reduced gate charge.
Area of application IRLB3034PBF Transistors :
- Control DC motors;
- power tools;
- switching in circuits with high current;
- secondary synchronous rectifier circuit;
- high-speed switching in the power systems.