Electronic and Instrumentation > Mosfet Transistors

IRLB3034PBF transistor

IRLB3034PBF transistor

Characteristics:
  • Channel Type: N
  • The maximum drain-source voltage: 40 B
  • The maximum drain-source current: 195 A
  • The maximum gate-source voltage: ± 20 V
  • Shutter Charge: 108 nC
  • Open Channel Resistance: 1.7 milliohms  
  • Power Dissipation: 375 W
  • The body to220ab
  • Datasheet
Price:
62 грн
Code: 664
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Є в наявності

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IRLB3034PBF transistor is designed for DC-DC converters and drive control systems with high operating current. Low open channel resistance level helps to improve the thermal conductivity of the system - one of the most critical parameters with high operating current converters. On the other hand, a low gate-source voltage of the transistor can control the microcontroller or when the battery is low. Low gate-source voltage also increases the efficiency when operating at low loads due to reduced gate charge.

Area of ​​application IRLB3034PBF Transistors :

  • Control DC motors;
  • power tools;
  • switching in circuits with high current;
  • secondary synchronous rectifier circuit;
  • high-speed switching in the power systems.

Reviews of the IRLB3034PBF transistor:


Богдан
Отлично!Все работает,даже лучше чем ожидалось.Буду заказывать и дальше.