IRF540N transistor
Characteristics:
- The structure: n-channel
- The maximum drain-source voltage: 100 V
- The maximum drain-source current at 25 ° C: 33 A
- The maximum gate-source voltage: ± 20 V
- Channel Resistance: 44 milliohms
- Maximum Power Dissipation: 120 W
- Housing: to220ab
- The threshold voltage of the gate: 2 ... 4
- Datasheet
Price:
24.5 грн
