Electronic and Instrumentation > Mosfet Transistors

2N7000 transistor

2N7000 transistor

Features:

  • Channel Type: N
  • The maximum drain-source voltage: 60 B
  • The drain current rating at 25 ° C: 0.2 A
  • Open the channel resistance: 5000 mOhms
  • The maximum gate voltage: 20 V
  • Power Dissipation: 0.4 W
  • Datasheet
Price:
3.9 грн
Code: 382
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FQP30N06 transistor

FQP30N06 transistor

Characteristics:
  • The structure: n-channel
  • The maximum drain-source voltage: 60 V
  • The maximum drain-source current at 25 ° C: 32 A
  • The maximum gate-source voltage: ± 20 V
  • Channel Resistance: 3.5 milliohms
  • The maximum power dissipation of 79 watts
  • The threshold gate voltage: 2.5 V
  • Housing: to220ab
  • Datasheet
Price:
31.9 грн
Code: 719
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irlz44 MOSFET transistor

irlz44 MOSFET transistor

Features:

  • Channel Type: N
  • The maximum drain-source voltage: 55 V
  • drain current at nominal 25 ° C, without being constrained case: A 41
  • The resistance of the open channel 22 ... 35 milliohms
  • Rated voltage range gate: 4.5 ... 10
  • The maximum gate voltage: 16 V
  • The charge of the gate: 32 nC
  • Power dissipation: 83 W
  • Operating temperature range: -55..175S
  • Datasheet
Price:
39.2 грн
Code: 267
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irf9640 transistor

irf9640 transistor

Features:

  • Transistor Polarity: P  
  • The maximum voltage Vds: 200V  
  • On Resistance: 0.5 ohms
  • Power Dissipation: 125 W  
  • The number of contacts: 3  
  • Lead Spacing: 2.54 mm  
  • Power consumption PD: 125 W
  • Pulse current Idm: 44A
  • Datasheet
Price:
44 грн
Code: 273
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IRLB3034PBF transistor

IRLB3034PBF transistor

Characteristics:
  • Channel Type: N
  • The maximum drain-source voltage: 40 B
  • The maximum drain-source current: 195 A
  • The maximum gate-source voltage: ± 20 V
  • Shutter Charge: 108 nC
  • Open Channel Resistance: 1.7 milliohms  
  • Power Dissipation: 375 W
  • The body to220ab
  • Datasheet
Price:
69 грн
Code: 664
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IRG4PC30F    transistor

IRG4PC30F transistor

Features:

  • voltage to the maximum-E: 600
  • maximum collector current: 17 A
  • The saturation voltage E K: 1.59 in
  • The rise time of 26 ns
  • Fall Time: 160 ns
  • Datasheet
Price:
147 грн
Code: 272
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IRFZ44N transistor

IRFZ44N transistor

Features:

  • Type: MOSFET power transistor
  • Channel Type: N
  • The maximum drain-source voltage: 55 V
  • The drain current rating at 25 ° C: 49 A
  • Open the channel resistance: 17.5 milliohms
  • The maximum gate voltage: 2..4 V
  • Power Dissipation: 94 W
  • Datasheet
Price:
27.9 грн
Code: 494
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IRF540N transistor

IRF540N transistor

Characteristics:
  • The structure: n-channel
  • The maximum drain-source voltage: 100 V
  • The maximum drain-source current at 25 ° C: 33 A
  • The maximum gate-source voltage: ± 20 V
  • Channel Resistance: 44 milliohms  
  • Maximum Power Dissipation: 120 W
  • Housing: to220ab
  • The threshold voltage of the gate: 2 ... 4
  • Datasheet
Price:
24.5 грн
Code: 742
шт.
Очікуєм

Transistor - electronic semiconductor device for amplifying, generating and converting electrical signals. Tranzistor allows you to adjust the strength of the electric current. Two main functions of the device in an electric circuit - a switch and an amplifier.

Transistor strengthens weak energy supplied to it by the energy of the signal power source.

In transistor three conclusions: the collector, base and emitter. Driving the transistor

Between the collector and emitter current, it is called the collector current, between the base and emitter - weak control current base. The magnitude of the collector current depends on the magnitude of the base current. Moreover, the collector current of the base current is always greater than a certain number of times. This value is called the current gain. Different types of transistors , this value varies from a few to hundreds of times.

Transistors is divided into two major groups:  

FET works as follows: a weak signal on the gate control a powerful flow through the channel. Unlike bipolar transistors, there is no control of current and voltage.

In FET has a semiconductor channel, which serves as a one capacitor plate and the second plate - a metal electrode disposed through a thin layer of silicon oxide, which is an insulator. When the gate voltage is applied, then the capacitor is charged, and the electric field pulls the gate to the channel charges, resulting in the channel the mobile charges arise capable of forming an electrical resistance and current drain - source sharply drops.

The advantage of FET , compared with bipolar obvious - to be supplied to the gate voltage, but since there is an insulator, the current is zero, and hence the required power to control this transistor will be miserable.

Field (MOS) transistors are P- and N-channel. The principle they have one and the same, the only difference in the polarity of the charge carriers in the channel. Accordingly, in a different direction, and control voltage switching in the circuit.

Field-effect transistors are mostly used in digital technology.

The company has GreenChip offers you preobresti various FETs .